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2SA1681

Part Number	2SA1681
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1681 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Power Switching Applications 2SA1681 Unit: mm • Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.
) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SC4409 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −60 −50 −6 −2 −0.
2 500 1000 150 −55 to 15...

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