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FDMC86106LZ

Part Number	FDMC86106LZ
Manufacturer	Fairchild Semiconductor
Description	N-Channel Power Trench MOSFET
Published	Sep 9, 2013
Detailed Description	FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.5 A, 103 ...
Datasheet	FDMC86106LZ PDF File

Overview

FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.
5 A, 103 mΩ Features Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.
3 A Max rDS(on) = 153 mΩ at VGS = 4.
5 V, ID = 2.
7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D D ...

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FDMC86106LZ N-Channel Power Trench MOSFET - Fairchild Semiconductor

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