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HITK0202MP

Renesas

Silicon N Channel MOS FET Power Switching


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Preliminary Datasheet HITK0202MP 20V, 3.8A, 55mmax. Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching  2.5 V gate drive R07DS0480EJ0200 Rev.2.00 May 09, 2013 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 S 1 G 1. S...



Renesas

HITK0202MP

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