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HITK0302MP

Renesas
Part Number HITK0302MP
Manufacturer Renesas
Description Silicon N Channel MOS FET Power Switching
Published Sep 9, 2013
Detailed Description Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 92 m...
Datasheet PDF File HITK0302MP PDF File

HITK0302MP
HITK0302MP


Overview
Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.
3 A)  Low drive current  High speed switching  4.
5 V gate drive R07DS0483EJ0100 Rev.
1.
00 Jun 22, 2011 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G 1.
Source 2.
Gate 3.
Drain S 1 Note: Marking is “GG”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 30 20 2.
7 5 2.
7 0.
8 150 –55 to +150 Unit V V A A A W C C Notes: 1.
PW  10 s, duty cycle  1% 2.
When using the glass epoxy board (FR-4: 40  40  1 mm) R07DS0483EJ0100 Rev.
1.
00 Jun 22, 2011 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ HITK0302MP Preliminary Electrical Characteristics (Ta = 25°C)...



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