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RJK0230DPA

Renesas
Part Number RJK0230DPA
Manufacturer Renesas
Description Silicon N Channel Power MOS FET
Published Sep 9, 2013
Detailed Description Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed...
Datasheet PDF File RJK0230DPA PDF File

RJK0230DPA
RJK0230DPA


Overview
Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.
1.
10 Sep 12, 2011 Features      Low on-resistance Capable of 4.
5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 S2 S2 S2 5 6 7 3 2 1 (Bottom View) 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanch...



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