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AUIRLL024Z

International Rectifier
Part Number AUIRLL024Z
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET® Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultr...
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AUIRLL024Z
AUIRLL024Z

Overview
PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET® Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S V(BR)DSS RDS(on) typ.
max.
ID 55V 48m 60m 5.
0A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D S D G SOT-223 AUIRLL024Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V i Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Parameter Max.
5.
0 4.
0 40 2.
8 1.
0 0.
02 ± 16 21 38 See Fig.
12a, 12b, 15, 16 -55 to + 150 Units A Power Dissipation Linear Derating Factor Gate-to-Source Voltage i j ™ i i h d W W/°C V mJ A mJ °C Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Ù Repetitive Avalanche...


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