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2SA1887

Part Number	2SA1887
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: m...
Datasheet	2SA1887 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
4 V (max) at IC = −5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −50 −7 −10 -1 2.
0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― SC-67 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-10R1A temperature/c...

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