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2SA1892

Toshiba Semiconductor
Part Number 2SA1892
Manufacturer Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1892 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File 2SA1892 PDF File

2SA1892
2SA1892


Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1892 Power Amplifier Applications Power Switching Applications 2SA1892 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A, IB = −0.
05 A) • High collector power dissipation: PC = 1.
3 W • High-speed switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SC5029 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 −50 −5 −3 −0.
2 1.
3 150 −55 to 150 V V V A A...



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