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IRF9395MPBF

Part Number	IRF9395MPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Sep 17, 2013
Detailed Description	PD - 96332A DirectFET dual P-Channel Power MOSFET Typical values (unless otherwise specified) IRF9395MPbF IRF9395MT...
Datasheet	IRF9395MPBF PDF File

Overview

PD - 96332A DirectFET dual P-Channel Power MOSFET Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.
2nC VDSS Applications l Isolation Switch for Input Power or Battery Application VGS Qgd 15nC RDS(on) Qoss 23nC -30V max ±20V max 5.
3mΩ@-10V 9.
0mΩ@-4.
5V Qg tot 32nC Qrr 62nC Vgs(th) -1.
8V Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT D S S S S D MC MP MC DirectFET ISOMETRIC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.
6 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number IRF9395MTRPbF IRF9395MTR1PbF Package Type DirectFET Medium Can DirectFET Medium Can Parameter Standard Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 Max.
Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM 24 Typical RDS(on) (mΩ) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current g e e f -VGS, Gate-to-Source Voltage (V) -30 ±20 -14 -11 -75 -110 A 14.
0 12.
0 10.
0 8.
0 6.
0 4.
0 2.
0 0.
0 0 20 40 60 80 QG Total Ga...

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IRF9395MPBF HEXFET Power MOSFET - International Rectifier

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