High Speed Power Switching
Description
Preliminary Datasheet
RJK4006DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
D
G
1. Gate 2. Drain 3. Source
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