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RJK5032DPH-E0

Renesas
Part Number RJK5032DPH-E0
Manufacturer Renesas
Description High Speed Power Switching
Published Sep 17, 2013
Detailed Description Preliminary Datasheet RJK5032DPH-E0 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance R...
Datasheet PDF File RJK5032DPH-E0 PDF File

RJK5032DPH-E0
RJK5032DPH-E0


Overview
Preliminary Datasheet RJK5032DPH-E0 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.
1  typ.
(at ID = 1.
5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS1039EJ0100 Rev.
1.
00 Mar 15, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
2.
STch = 25C, Tch  150C 3.
Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse)Note1 IAP Note2 EAR Note2 Pch Note 3 ch-c Tch Tstg Value 500 30 3 6 3 6 3 0.
5 40.
3 3.
1 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS1039EJ0100 Rev.
1.
00 Mar 15, 2013 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ RJK5032DPH-E0 Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 — — 3.
5 — — — — — — — — — — — — — Typ — — — — 2.
1 280 33 3.
5 11 12 23 20 9.
2 1.
8 4.
8 0.
9 200 Max — 1 0.
1 4.
5 2.
8 — — — — — — — — — — 1.
5 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = ...



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