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SUF2001

KODENSHI KOREA
Part Number SUF2001
Manufacturer KODENSHI KOREA
Description Dual N-and P-channel Trench MSFET
Published Sep 17, 2013
Detailed Description SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features  Low VGS(th): VGS(th)=1.0~...
Datasheet PDF File SUF2001 PDF File

SUF2001
SUF2001

Overview
SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features  Low VGS(th): VGS(th)=1.
0~3.
0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.
9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.
7A) Ordering Information Part Number Marking Code Package SOP-8 SUF2001 SUF2001 SOP-8 Marking Information Column 1: Device Code Column 2: Production Information -.
Y: Year Code -.
WW: Week Code SUF2001 YWW Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Total power dissipation ** Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range ① ① (TA=25C unless otherwise noted) Rating Symbol N-Ch VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rth(J-A) 5.
8 ② 72 ② Unit P-Ch -30 20 5.
8 23.
2 2 -5.
3 ⑥ 33 ⑥ 30 V V -5.
3 -21.
2 A A W A mJ A mJ C C/W 5.
...


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