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UPA2814T1S

Renesas
Part Number UPA2814T1S
Manufacturer Renesas
Description P-channel MOSFEF
Published Sep 17, 2013
Detailed Description Data Sheet μPA2814T1S P-channel MOSFET –30 V, –24 A, 7.8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Tr...
Datasheet PDF File UPA2814T1S PDF File

UPA2814T1S
UPA2814T1S

Overview
Data Sheet μPA2814T1S P-channel MOSFET –30 V, –24 A, 7.
8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
R07DS0776EJ0101 Rev.
1.
01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.
8 mΩ MAX.
(VGS = −10 V, ID = −24 A) • 4.
5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No.
Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ.
0.
022 g Package μPA2814T1S-E2-AT Note: ∗ ∗1 1.
Pb-free (This product does not contain Pb in external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temp...


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