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RJP3067DPK

Renesas Technology
Part Number RJP3067DPK
Manufacturer Renesas Technology
Description IGBT
Published Sep 19, 2013
Detailed Description April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanc...
Datasheet PDF File RJP3067DPK PDF File

RJP3067DPK
RJP3067DPK

Overview
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Power supply IGBT Product Lineup Power MOSFET P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P VDSS (V) 100 100 230 230 230 250 250 300 300 300 350 Maximum Rating ID (A) 15 30 25 30 35 30 50 25 25 40 20 VGS (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 Electrical Characteristics VGS(off) RDS(on) typ(V) typ(mΩ） 2.
0 85 2.
0 25 3.
5 65 3.
5 48 3.
5 30 3.
5 53 3.
5 40 3.
5 75 2.
8 120 3.
5 60 3.
5 100 Package LDPAK LDPAK TO-3PFM TO-3PFM TO-3PFM TO-3P...


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