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KU045N10P

Part Number	KU045N10P
Manufacturer	KEC
Description	N-ch Trench MOS FET
Published	Sep 21, 2013
Detailed Description	SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet	KU045N10P PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.
5m (Max.
) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipati...

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KU045N10P N-ch Trench MOS FET - KEC

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