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IXKH47N60C

IXYS
Part Number IXKH47N60C
Manufacturer IXYS
Description Power MOSFET
Published Sep 28, 2013
Detailed Description IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max ...
Datasheet PDF File IXKH47N60C PDF File

IXKH47N60C
IXKH47N60C

Overview
IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ TO-247 G G D S S q tab E72873 MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
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480 V Conditions Conditions TVJ = 25°C Maximum Ratings 600 ± 20 47 30 1800 tbd tbd V V A A mJ mJ V/ns Features • 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications • Switched mode power supplies ...


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