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FCD380N60E

Fairchild Semiconductor
Part Number FCD380N60E
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 6, 2013
Detailed Description FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V...
Datasheet PDF File FCD380N60E PDF File

FCD380N60E
FCD380N60E

Overview
FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.
2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max.
RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ.
Qg = 34 nC) • Low Effective Output Capacitance (Typ.
Coss.
eff = 97 pF) • 100% Avalanche Tested Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Conse...


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