Infrared Laser Diode
Description
RLT1300-10G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
Structure: GaInAsP/InP SQW strucutre Peak Wavelength : single mode, typ. 1300 nm Optical Ouput Power: 10 mW Package: 9 mm
Electrical Connection
Pin Configuration
n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
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