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RLT850M-1WG50

Roithner

Laser Diode

Description
RLT850M-1WG50 TECHNICAL DATA Infrared Laser Diode Specifications Structure: Peak Wavelength: Optical Output Power: Package: Monitor PD: AlGaAs/InGaAs AlGaAs/InGaAs 852 nm 1 W, cw 9 mm, flat window build-in n-type Electrical Connection Pin Configuration n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode (case) PD Anode Bottom View Electr...


Roithner

RLT850M-1WG50

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