PNP Transistors
Description
SMD Type
PNP Transistors 2SA1434
TransistIoCrs
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V).
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1....
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