Transistor
Description
Product specification
2SA1434
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3....
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