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2SB856

Part Number	2SB856
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SB856 DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VC...
Datasheet	2SB856 PDF File

Overview

isc Silicon PNP Power Transistor 2SB856 DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.
2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 25 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.
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