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2SB817E

Part Number	2SB817E
Manufacturer	TAITRON
Description	Power Transistor
Published	Oct 25, 2013
Detailed Description	Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpo...
Datasheet	2SB817E PDF File

Overview

Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.
22 ounce, 6.
2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.
0 12 15 100 0.
8 1.
25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate above 25°C RθJC TJ, TSTG ...

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