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PBSS4160PANP

NXP
Part Number PBSS4160PANP
Manufacturer NXP
Description NPN/NPN transistor
Published Oct 29, 2013
Detailed Description DF N2 020 -6 PBSS4160PANP 14 January 2013 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. Gener...
Datasheet PDF File PBSS4160PANP PDF File

PBSS4160PANP
PBSS4160PANP

Overview
DF N2 020 -6 PBSS4160PANP 14 January 2013 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.
General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4160PAN.
PNP/PNP complement: PBSS5160PAP.
2.
Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.
Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.
g.
motors, fans) 4.
Quick reference data Table 1.
Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 0.
5 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 ; Tamb = 25 °C 240 mΩ Quick reference data Parameter ...


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