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PBSS4230PAN

NXP
Part Number PBSS4230PAN
Manufacturer NXP
Description NPN/NPN low VCEsat (BISS) transistor
Published Oct 29, 2013
Detailed Description PBSS4230PAN 14 December 2012 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description...
Datasheet PDF File PBSS4230PAN PDF File

PBSS4230PAN
PBSS4230PAN

Overview
PBSS4230PAN 14 December 2012 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1.
General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP.
PNP/PNP complement: PBSS5230PAP.
2.
Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.
Applications • • • • • Load switch Battery-driven devices ...


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