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2SC2712GT1G

ON Semiconductor
Part Number 2SC2712GT1G
Manufacturer ON Semiconductor
Description Medium Frequency NPN Amplifier Transistor
Published Oct 29, 2013
Detailed Description 2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium...
Datasheet PDF File 2SC2712GT1G PDF File

2SC2712GT1G
2SC2712GT1G

Overview
2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys.
The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications.
Features http://onsemi.
com COLLECTOR 3 • • • • • Lower VCE(sat)* Higher Gain (hfe)* Higher Breakdown Voltage Rating* Moisture Sensitivity Level: 1 This is a Pb−Free Device 2 BASE 1 EMITTER Benefits • Longer Battery Life • Improved Performance Through Targeted Design MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) IB Value 60 50 5.
0 150 200 30 Unit Vdc Vdc Vdc mAdc mAdc mAdc 3 2 1 SC−59 CASE 318D STYLE 1 MARKING DIAGRAMS SCG M SCG = Specific Date Code M = Date Code THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 − 55 to +150 Unit mW °C °C ORDERING INFORMATION Device 2SC2712GT1G Package SC−59 (Pb−Free) Shipping† 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*Specifications compared to MMBT3904.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev.
2 1 Publication Order Number: 2SC2712GT1/D Free Datasheet http://www.
datasheet4u.
com/ 2SC2712GT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.
0 mAdc, IB = 0) Coll...


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