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AON6934A

Alpha & Omega Semiconductors
Part Number AON6934A
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual Asymmetric N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology...
Datasheet PDF File AON6934A PDF File

AON6934A
AON6934A

Overview
AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Q1 30V 28A <5.
2mΩ <9.
5mΩ Q2 30V 36A <2.
9mΩ <4.
4mΩ Top View DFN5X6 Bottom View PIN1 PIN1 Top View BoBtotottmomViVeiwew Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain CurrentG TC=25°C TC=100°C ID 28 36 22 28 Pulsed Drain Current C IDM 112 144 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.
05mH C IDSM IAS EAS 22 17 32* 26* 30 24 46* 53* VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 31 12 33 13 TA=25°C Power Dissipation A TA=70°C PDSM 3.
6 2.
3 4.
3 2.
7 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-Case Steady-State RθJC *Q1 L=0.
1mH, IAS=20A, EAS=20mJ, Starting TJ=25°C.
*Q2 L=0.
1mH, IAS=33A, EAS=54mJ, Starting TJ=25°C.
Typ Q1 29 56 3.
3 Typ Q2 24 50 3 Max Q1 35 67 4 Max Q2 29 60 3.
8 Units °C/W °C/W °C/W Rev 2.
0 : April 2014 www.
aosmd.
com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Volta...


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