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2N3811

Microsemi Corporation
Part Number 2N3811
Manufacturer Microsemi Corporation
Description PNP SILICON DUAL TRANSISTOR
Published Mar 23, 2005
Detailed Description TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L...
Datasheet PDF File 2N3811 PDF File

2N3811
2N3811

Overview
TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 60 60 5.
0 50 One Both Section 1 Sections2 0.
5 0.
6 -65 to +200 Unit Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.
86 mW/0C for TA > +250C 2) Derate linearly 3.
43 mW/0C for TA > +250C PT TJ, Tstg 0 W C TO-78* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 4.
0 Vdc V(BR)CBO V(BR)CEO V(BR)EBO ICBO 60 60 5.
0 10 10 Vdc Vdc Vdc ηAdc ηAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min.
Max.
Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.
0 Vdc IC = 100 µAdc, VCE = 5.
0 Vdc IC = 500 µAdc, VCE = 5.
0 Vdc IC = 1.
0 mAdc, VCE = 5.
0 Vdc IC = 10 mAdc, VCE = 5.
0 Vdc IC = 1.
0 µAdc, VCE = 5.
0Vdc IC = 10 µAdc, VCE = 5.
0 Vdc IC = 100 µAdc, VCE = 5.
0 Vdc IC = 500 µAdc, VCE = 5.
0 Vdc IC = 1.
0 mAdc, VCE = 5.
0 Vdc IC = 10 mAdc, VCE = 5.
0 Vdc Collector-Emitter Saturation Voltage IC = 100 µAdc, IB = 10 µAdc IC = 1.
0 mAdc, IB = 100 µAdc Base-Emitter Saturation Voltage IC = 100 µAdc, IB = 10 µAdc IC = 1.
0 mAdc, IB = 100 µAdc Base-Emitter Non-Saturation Voltage VCE = 5.
0 Adc, IC = 100 µAdc 2N3810, 2N3810L 100 150 150 150 125 hFE 2N3811, 2N3811L 75 225 300 300 300 250 VCE(sat) 450 450 45...


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