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TK20J50D

Toshiba
Part Number TK20J50D
Manufacturer Toshiba
Description N-Channel MOSFET
Published Nov 3, 2013
Detailed Description TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK20J50D Switching Regulator Applicatio...
Datasheet PDF File TK20J50D PDF File

TK20J50D
TK20J50D

Overview
TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK20J50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
22 Ω (typ.
) • High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 2.
0 1.
0 15.
9 MAX.
Unit: mm Ф3.
2 ± 0.
2 4.
5 20.
0 ± 0.
3 9.
0 2.
0 3.
3 MAX.
20.
5 ± 0.
5 Absolute Maximum Ratings (Ta = 25°C) 2.
0 ± 0.
3 1.
0 ＋0.
3 －0.
25 Characteristics Symbol Rating Unit 5.
45 ± 0.
2 5.
45 ± 0.
2 2.
8 4.
8 MAX.
1.
8 MAX.
＋0.
3 0.
6 －0.
1 Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 V ±30 V 20 A 80 280 W 470 mJ 20 A 28 mJ 150 °C −55 to ...


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