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2N3955

Part Number	2N3955
Manufacturer	ETC
Description	N-Channel Dual Silicon Junction Field-Effect Transistor
Published	Mar 23, 2005
Detailed Description	01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency D...
Datasheet	2N3955 PDF File

Overview

01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.
3 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteri...

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