Silicon Power MOSFET
Description
Data Sheet
NE5550234
Silicon Power MOS FET
FEATURES
R09DS0039EJ0300 Rev.3.00 Mar 12, 2013
High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset =...
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