Silicon Power LDMOS FET
Description
Data Sheet
NE5550279A
Silicon Power LDMOS FET
FEATURES
R09DS0033EJ0100 Rev.1.00 Mar 28, 2012
High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDse...
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