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RN2910AFS

Part Number	RN2910AFS
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Nov 11, 2013
Detailed Description	RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor...
Datasheet	RN2910AFS PDF File

Overview

RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2910AFS, RN2911AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Two devices are incorporated into a fine-pitch, small-mold (6-pin) package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs.
Complementary to the RN1910AFS/RN1911AFS 0.
1±0.
05 0.
35 0.
35 Unit: mm 1.
0±0.
05 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05 (E1) (B1) (C2) (E2) (B2) (C1) Unit nA nA V pF kΩ 1.
0±0.
05 0.
7±0.
05 1 2 3 6 5 4 0.
1±0.
05 • C 0.
48 -0.
04 +0.
02 Equivalent Circuit and Bias Resistor Values B R1 E fS6 JEDEC JEITA Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −5 −80 50 150 −55~150 Unit V V V mA mW °C °C Q1 1.
EMITTER1 2.
BASE1 3.
COLLECTOR2 4.
EMITTER2 5.
BASE2 6.
COLLECTOR1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range ― ― 2-1F1D TOSHIBA Weight: 0.
001 g (typ.
) Equivalent Circuit (top view) 6 5 4 Q2 Note: Using continuously under heavy loads (e.
g.
the application of high 1 2 3 temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Collector cutoff current E...

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RN2910AFS Silicon PNP Transistor - Toshiba

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