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RN2911FE

Toshiba
Part Number RN2911FE
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Nov 11, 2013
Detailed Description RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN291...
Datasheet PDF File RN2911FE PDF File

RN2911FE
RN2911FE

Overview
RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
• Complementary to RN1910FE, RN1911FE Unit: mm Equivalent Circuit and Bias Resistor Values C B R1 JEDEC E ― ― 2-2N1G JEITA TOSHIBA Weight: 0.
003g (typ.
) Equivalent Circuit (top view) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C 1 2 ...


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