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TPC6012

Toshiba

N-Channel MOSFET


Description
TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = ...



Toshiba

TPC6012

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