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TC58NVG6DDJTA00

Part Number	TC58NVG6DDJTA00
Manufacturer	Toshiba
Description	64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
Published	Nov 18, 2013
Detailed Description	TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6DDJTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G...
Datasheet	TC58NVG6DDJTA00 PDF File

Overview

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6DDJTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG6DD is a single 3.
3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks.
The device has two 17664-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 17664-byte increments.
The Erase operation is implemented in a single block unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages).
The TC58NVG6DD is a serial-type memory devi...

Similar Datasheet

TC58NVG6DDJTA00 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM - Toshiba

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