DatasheetsPDF.com

TK22A10N1

Toshiba
Part Number TK22A10N1
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 26, 2013
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK22A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low dr...
Datasheet PDF File TK22A10N1 PDF File

TK22A10N1
TK22A10N1

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK22A10N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 11.
5 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
3 mA) 3.
Packaging and Internal Circuit TK22A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1,2) ID 52 A Drain current (DC) (Tc = 25) (Note 1) ID 22 Drain current (...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)