N-channel MOSFET
Description
SAMWIN
SW2N65
N-channel MOSFET
BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm
2 1 2 1 3 2 3 1
Features
■ High ruggedness ■ RDS(ON) (Max 5.0 Ω)@VGS=10V ■ Gate Charge (Max 8nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. ...
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