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AP9924GO

Advanced Power Electronics
Part Number AP9924GO
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Dec 9, 2013
Detailed Description AP9924GO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ RoH...
Datasheet PDF File AP9924GO PDF File

AP9924GO
AP9924GO

Overview
AP9924GO RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ RoHS Compliant D S2 S2 G2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G1 S1 S1 20V 20mΩ 6.
8A TSSOP-8 D ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D D G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +8 6.
8 5.
4 20 1.
38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 2009002021 Free Datasheet http://www.
datasheet4u.
com/ AP9924GO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.
5V, ID=6A VGS=2.
5V, ID=4A Min.
20 0.
25 - Typ.
19 9 1 4.
5 8 10 16 7 400 120 110 Max.
Units 20 30 1 10 +100 14.
4 640 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VGS= +8V, VDS=0V ID=6A VDS=16V VGS=4.
5V VDS=10V ID=1A RG=3.
3Ω,VGS=5V RD=10Ω VGS=0V VDS=20V f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2...


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