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IXA33IF1200HB

Part Number	IXA33IF1200HB
Manufacturer	IXYS
Description	XPT IGBT
Published	Dec 16, 2013
Detailed Description	IXA33IF1200HB XPT IGBT VCES I C25 = = 1200 V 58 A 1.8 V VCE(sat) = Copack Part number IXA33IF1200HB Backside: c...
Datasheet	IXA33IF1200HB PDF File

Overview

IXA33IF1200HB XPT IGBT VCES I C25 = = 1200 V 58 A 1.
8 V VCE(sat) = Copack Part number IXA33IF1200HB Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
- very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified 20100702b © 2010 IXYS all rights reserved Free Datasheet http://www.
datasheet4u.
com/ IXA33IF1200HB IGBT Symbol VCES VGES VGEM I C25 I C80 Ptot VCE(sat) VGE(th) I CES I GES Q G(on) t d(on) tr t d(off) tf Eon Eoff RBSOA I CM SCSOA t SC I SC R thJC R thCH short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case thermal resistance case to heatsink total power dissipation collector emitter saturation voltage Ratings Definition collector emitter voltage max.
DC gate voltage max.
transient gate emitter voltage collector current Conditions TVJ = 25°C min.
typ.
max.
1200 ±20 ±30 Unit V V V A A W V V V mA mA nA nC ns ns ns ns mJ mJ TC = 25°C TC = 80 °C TC = 25°C IC = IC = 25 A; VGE = 15 V 1 mA; VGE = VCE TVJ = 25°C TVJ = 125 °C TVJ = 25°C TVJ = 25°C TVJ = 125 °C 0.
1 5.
4 1.
8 2.
1 5.
9 58 34 250 2.
1 6.
5 0.
1 500 gate emitter threshold voltage collector emitter leakage current ...

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IXA33IF1200HB XPT IGBT - IXYS

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