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IXTT16P60P

IXYS
Part Number IXTT16P60P
Manufacturer IXYS
Description Power MOSFET
Published Dec 16, 2013
Detailed Description Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P6...
Datasheet PDF File IXTT16P60P PDF File

IXTT16P60P
IXTT16P60P

Overview
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 600 - 600 ±20 ±30 - 16 - 48 - 16 2.
5 10 460 - 55 .
.
.
+150 150 - 55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g g Features: z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain...


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