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AOY514

Alpha & Omega Semiconductors
Part Number AOY514
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(...
Datasheet PDF File AOY514 PDF File

AOY514
AOY514

Overview
AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.
5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 46A < 5.
9mW < 11.
9mW Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK: AOD514 TO251A IPAK: AOI514 TO251B (IPAK short lead): AOY514 D TopView Bottom View Top View Bottom View D D DS DG S G S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current G TC=25°C TC=100°C ID 46 36 Pulsed Drain Current C IDM 163 Continuous Drain Current TA=25°C TA=70°C IDSM 17 13 Avalanche Current C IAS 25 Avalanche energy L=0.
1mH C EAS 31 VDS Spike 100ns VSPIKE 36 TC=25°C Power Dissipation B TC=100°C PD 50 25 TA=25°C Power Dissipation A TA=70°C PDSM 2.
5 1.
6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G G D S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 41 Maximum Junction-to-Case Steady-State RqJC 2.
5 Max 20 50 3 S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.
6.
1: January 2024 www.
aosmd.
com Page 1 of 6 AOD514/AOI514/AOY514 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250mA 1.
6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A ...


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