AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. RoHS and Halogen-Free Compliant
Features
VDS (V) = -20V
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