Power-Transistor
Description
IPD800N06N G
OptiMOS® Power-Transistor
Features For fast switching converters and sync. rectification N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A
Type
IPD800N06N G
Package Marking
PG-TO252-3 800N06N
Maximum ratings,...
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