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IPD80N06S3-09

Infineon
Part Number IPD80N06S3-09
Manufacturer Infineon
Description Power-Transistor
Published Jan 13, 2014
Detailed Description IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ A Features • N-channel ...
Datasheet PDF File IPD80N06S3-09 PDF File

IPD80N06S3-09
IPD80N06S3-09

Overview
IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.
4 80 V mΩ A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO252-3-11 Type IPD80N06S3-09 Package PG-TO252-3-11 Marking QN0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and...


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