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K3868

2SK3868

Description

www.DataSheet4U.com 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID...

Toshiba Semiconductor

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