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P12N50

Fairchild Semiconductor
Part Number P12N50
Manufacturer Fairchild Semiconductor
Description FDP12N50
Published Feb 13, 2014
Detailed Description FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • R...
Datasheet PDF File P12N50 PDF File

P12N50
P12N50

Overview
FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.
5A, 0.
65Ω Features • RDS(on) = 0.
55Ω (Typ.
)@ VGS = 10V, ID = 6A • Low gate charge ( Typ.
22nC) • Low Crss ( Typ.
11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D G DS TO-220 FDP Series GD S TO-220F FDPF Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to S...


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