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HGT1S2N120CNDS

Intersil Corporation
Part Number HGT1S2N120CNDS
Manufacturer Intersil Corporation
Description 13A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Published Mar 23, 2005
Detailed Description HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Ant...
Datasheet PDF File HGT1S2N120CNDS PDF File

HGT1S2N120CNDS
HGT1S2N120CNDS

Overview
HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.
2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49313.
The Diode used is the development type TA49056 (Part number RHRD4120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49311.
Features • 13A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time.
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