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HGT1S7N60B3DS

Intersil Corporation
Part Number HGT1S7N60B3DS
Manufacturer Intersil Corporation
Description 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
Published Mar 23, 2005
Detailed Description HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.2 14A, 600V, UFS Series N-Channel IGBTs with Anti-P...
Datasheet PDF File HGT1S7N60B3DS PDF File

HGT1S7N60B3DS
HGT1S7N60B3DS

Overview
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.
2 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current.
The IGBT is developmental type TA49190.
The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching applications operating at modera...


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