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HGT4E20N60A4DS

Part Number	HGT4E20N60A4DS
Manufacturer	Fairchild Semiconductor
Description	600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Published	Mar 23, 2005
Detailed Description	HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode ...
Datasheet	HGT4E20N60A4DS PDF File

Overview

HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49339.
The diode used in anti-parallel is the development type TA49372.
These IGBT’s are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
These d...

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HGT4E20N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode - Fairchild Semiconductor

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